HUF75639S3S Datasheet - Intersil Corporation

HUF75639S3S N-Channel MOSFET

HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 File Number 4477.7 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. .

HUF75639S3S Features

* 56A, 100V

* Simulation Models - Temperature Compensated PSPICETM and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Intersil.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “Guidelines for S

HUF75639S3S_IntersilCorporation.pdf