HUF75639S3R4851 Datasheet - Fairchild Semiconductor

HUF75639S3R4851 N-Channel MOSFET

HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications w.

HUF75639S3R4851 Features

* 56A, 115V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve Ordering Information PART NUMBER HUF75639S3R4851 P

HUF75639S3R4851_FairchildSemiconductor.pdf