HUF75343G3 Datasheet - Fairchild Semiconductor

HUF75343G3 N-Channel MOSFET

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was desi.

HUF75343G3 Features

* 75A, 55V

* Simulation Models - Temperature Compensating PSPICE® and SABER™ Models - Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334,

HUF75343G3_FairchildSemiconductor.pdf