HUF75639G3 - N-Channel Power MOSFET
Symbol Ratings Units Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current Continuous (Figure 2) Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25°C VDSS VDGR VGS ID IDM EAS PD 100 V 100 V ±20 V 56 Figure
DATA SHEET www.onsemi.com MOSFET Power, N-Channel, Ultrafet 100 V, 56 A, 25 mW HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 These N Channel power MOSFETs are manufactured using the innovative Ultrafet process.
This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time
HUF75639G3 Features
* 56 A, 100 V
* Simulation Models
* Temperature Compensated PSPICE® and SABER™ Electrical Models
* Spice and Saber Thermal Impedance Models
* www.onsemi.com
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* Related Literature
