Datasheet Details
- Part number
- HUF75639G3
- Manufacturer
- ON Semiconductor ↗
- File Size
- 860.75 KB
- Datasheet
- HUF75639G3-ONSemiconductor.pdf
- Description
- N-Channel Power MOSFET
Symbol Ratings Units Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current Continuous (Figure 2) Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25°C VDSS VDGR VGS ID IDM EAS PD 100 V 100 V ±20 V 56 Figure 4 Figures 6, 14, 15 200 1.35 V V V A W W/°C Operating and Storage Temperature TJ, TSTG 55 to 175°C °C Maximum Temperature for Soldering Leads at 0.063in (1.6 mm) from Case for 10s TL
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