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HUFA76609D3S - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE HUFA76609D3 HUFA76609D3S Symbol D.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Full PDF Text Transcription

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HUFA76609D3, HUFA76609D3S Data Sheet January 2002 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE HUFA76609D3 HUFA76609D3S Symbol D • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76609D 76609D HUFA76609D3 G S HUFA76609D3S NOTE: When ordering, use the entire part number.
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