* 5.6A, 100V
* rDS(ON) = 0.540Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines fo
IRF510
Fairchild Semiconductor
90.67 KB
N-channel power mosfet.
Data Sheet
January 2002
IRF510
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transis.
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