IRF510 Datasheet - Fairchild Semiconductor

IRF510 N-Channel Power MOSFET

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors req.

IRF510 Features

* 5.6A, 100V

* rDS(ON) = 0.540Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines fo

IRF510_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRF510

Manufacturer:

Fairchild Semiconductor

File Size:

90.67 KB

Description:

N-channel power mosfet.

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