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IRF510A - Advanced Power MOSFET

Datasheet Summary

Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ. ) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25.

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Datasheet Details

Part number IRF510A
Manufacturer Fairchild Semiconductor
File Size 252.81 KB
Description Advanced Power MOSFET
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Full PDF Text Transcription

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ.) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3.
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