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IRF510A

Advanced Power MOSFET

IRF510A Features

* n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ.) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID =

IRF510A Datasheet (252.81 KB)

Preview of IRF510A PDF

Datasheet Details

Part number:

IRF510A

Manufacturer:

Fairchild Semiconductor

File Size:

252.81 KB

Description:

Advanced power mosfet.

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TAGS

IRF510A Advanced Power MOSFET Fairchild Semiconductor

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