IRF530 Datasheet - Fairchild Semiconductor

IRF530 N-Channel Power MOSFET

Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of op.

IRF530 Features

* 14A, 100V

* rDS(ON) = 0.160Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRF530_FairchildSemiconductor.pdf

IRF530 Datasheet Preview — Preview of IRF530 PDF

Datasheet Details

Part number:

IRF530

Manufacturer:

Fairchild Semiconductor

File Size:

70.67 KB

Description:

N-channel power mosfet.

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IRF530 IRF530 N-Channel Power MOSFET Fairchild Semiconductor

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