IRF5305PbF
International Rectifier
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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IRF5305 - Power MOSFET
(International Rectifier)
PD - 91385B
IRF5305
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C.
IRF5305 - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
IRF5305,IIRF5305
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche test.
IRF5305L - Power MOSFET
(International Rectifier)
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
IRF5305L - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .
IRF5305LPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95957
IRF5305S/LPbF
• Lead-Free
..
.irf.
1
4/21/05
IRF5305S/LPbF
2
.irf.
IRF5305S/LPbF
.irf.
3
IRF5.
IRF5305S - Power MOSFET
(International Rectifier)
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
IRF5305S - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .
IRF5305SPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95957
IRF5305S/LPbF
• Lead-Free
..
.irf.
1
4/21/05
IRF5305S/LPbF
2
.irf.
IRF5305S/LPbF
.irf.
3
IRF5.
IRF530 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF530
FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.
IRF530 - N-Channel MOSFET
(Motorola Inc)
.
