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IRF5305PbF - Power MOSFET

IRF5305PbF Description

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche Rated Lead-Free Descri.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF5305PbF Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

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Power MOSFET International Rectifier
International Rectifier IRF5305PbF-like datasheet