IRF5305S Datasheet - International Rectifier

Power MOSFET

IRF5305S Features

* 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7

IRF5305S General Description

l l D VDSS = -55V RDS(on) = 0.06Ω G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow.

IRF5305S Datasheet (171.24 KB)

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IRF5305S

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International Rectifier

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171.24 KB

Description:

Power mosfet.
PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.

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IRF5305S Power MOSFET International Rectifier

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IRF5305S Features

IRF5305S General Description

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