IRF5305L - Power MOSFET
(International Rectifier)
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
IRF5305L - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .
IRF5305 - Power MOSFET
(International Rectifier)
PD - 91385B
IRF5305
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C.
IRF5305 - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
IRF5305,IIRF5305
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche test.
IRF5305PbF - Power MOSFET
(International Rectifier)
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
G
Fully Avalanche Rated
Lead-Free
Descri.
IRF5305S - Power MOSFET
(International Rectifier)
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.