IRF530 Datasheet - Inchange Semiconductor

IRF530 N-Channel MOSFET Transistor

IRF530 Features

* Low RDS(on)

* VGS Rated at ±20V

* Silicon Gate for Fast Switching Speed

* Rugged

* Low Drive Requirements

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

* Designed especially for high voltage,high speed applications, such as

Datasheet Details

IRF530

Inchange Semiconductor

235.10 KB

N-channel mosfet transistor.

📁 Related Datasheet

IRF530 N-Channel MOSFET (Motorola Inc)

IRF530 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)

IRF530 Power MOSFET (International Rectifier)

IRF530 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF530 N-Channel MOSFET (Harris Corporation)

IRF530 Power MOSFET (Vishay)

IRF530 Power Field Effect Transistor (ON Semiconductor)

IRF5305 Power MOSFET (International Rectifier)

TAGS

IRF530 Distributor