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isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF530
FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous@ TC=25℃
14
ID
A
Drain Current-continuous@ TC=100℃
9
IDM
Drain Current-Single Plused
56
A
PD
Total Dissipation @TC=25℃
79
W
Tj
Max.
IRF530 Datasheet
