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IRF530L

Power MOSFET

IRF530L Features

* .110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D

IRF530L General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF530L Datasheet (178.57 KB)

Preview of IRF530L PDF

Datasheet Details

Part number:

IRF530L

Manufacturer:

International Rectifier

File Size:

178.57 KB

Description:

Power mosfet.
PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175.

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IRF530L Power MOSFET International Rectifier

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