IRF530NS Datasheet, Mosfet, INCHANGE

IRF530NS Features

• Mosfet
• With To-263(D2PAK) package
• Low input capacitance and gate charge
• Low gate input resistance
• 100% avalanche tested
• Minimum Lot-to-Lot variatio

PDF File Details

Part number:

IRF530NS

Manufacturer:

INCHANGE

File Size:

253.99kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IRF530NS Application

• Applications
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100

TAGS

IRF530NS

INCHANGE

📁 Related Datasheet

IRF530N - N-channel TrenchMOS transistor (NXP)
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fa.

IRF530N - N-Channel Power MOSFET (Intersil Corporation)
IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Featur.

IRF530N - Power MOSFET (International Rectifier)
PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera.

IRF530N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IRF530N - Power MOSFET (Fairchild Semiconductor)
Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE).

IRF530NL - HEXFET Power MOSFET (International Rectifier)
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l .

IRF530NL - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.

IRF530NLPBF - HEXFET Power MOSFET (International Rectifier)
PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit.

IRF530NPbF - HEXFET Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRF530NPBF - N-Channel MOSFET (VBsemi)
IRF530NPBF IRF530NPBF Datasheet .VBsemi. N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V I.