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IRF530NS N-Channel MOSFET

IRF530NS Description

Isc N-Channel MOSFET Transistor IRF530NS *.

IRF530NS Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF530NS Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 17 12 60 PD Total Dissipation @TC=25℃ 70 Tch Max. Operating Jun

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Datasheet Details

Part number
IRF530NS
Manufacturer
INCHANGE
File Size
253.99 KB
Datasheet
IRF530NS-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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