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IRF5305S P-Channel MOSFET

IRF5305S Description

isc P-Channel MOSFET Transistor *.

IRF5305S Features

* Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF5305S Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Tem

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Datasheet Details

Part number
IRF5305S
Manufacturer
INCHANGE
File Size
248.55 KB
Datasheet
IRF5305S-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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