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IRF530N N-Channel MOSFET

IRF530N Description

isc N-Channel MOSFET Transistor *.

IRF530N Features

* Static drain-source on-resistance: RDS(on) ≤0.09Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF530N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 70 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRF530N
Manufacturer
INCHANGE
File Size
240.73 KB
Datasheet
IRF530N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF530N-like datasheet