* - SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) NOTES: 2X 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTL
IRF530NPbF Datasheet (173.51 KB)
IRF530NPbF
International Rectifier
173.51 KB
Hexfet power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
📁 Related Datasheet
IRF530NPBF N-Channel MOSFET (VBsemi)
IRF530N N-channel TrenchMOS transistor (NXP)
IRF530N N-Channel Power MOSFET (Intersil Corporation)
IRF530N Power MOSFET (International Rectifier)
IRF530N N-Channel MOSFET (INCHANGE)
IRF530N Power MOSFET (Fairchild Semiconductor)
IRF530NL HEXFET Power MOSFET (International Rectifier)
IRF530NL N-Channel MOSFET (INCHANGE)
IRF530NLPBF HEXFET Power MOSFET (International Rectifier)
IRF530NS Power MOSFET (International Rectifier)
