IRF530NPbF Datasheet - International Rectifier

IRF530NPbF, HEXFET Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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IRF530NPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF530NPbF

Manufacturer:

International Rectifier

File Size:

173.51 KB

Description:

HEXFET Power MOSFET

Features

* - SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) NOTES: 2X 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTL

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

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IRF530NPbF HEXFET Power MOSFET International Rectifier

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