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IRF530NLPBF

HEXFET Power MOSFET

IRF530NLPBF Features

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IRF530NLPBF General Description

l IRF530NSPbF IRF530NLPbF ® VDSS = 100V RDS(on) = 90mΩ D G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de.

IRF530NLPBF Datasheet (301.73 KB)

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Datasheet Details

Part number:

IRF530NLPBF

Manufacturer:

International Rectifier

File Size:

301.73 KB

Description:

Hexfet power mosfet.
PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit.

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IRF530NLPBF HEXFET Power MOSFET International Rectifier

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