IRF530NLPBF Datasheet - International Rectifier

IRF530NLPBF HEXFET Power MOSFET

l IRF530NSPbF IRF530NLPbF ® VDSS = 100V RDS(on) = 90mΩ D G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de.

IRF530NLPBF Features

* ns are shown in millimeters (inches) D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN

IRF530NLPBF_InternationalRectifier.pdf