Datasheet4U Logo Datasheet4U.com

IRF530NS Power MOSFET

IRF530NS Description

PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per sili.

IRF530NS Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio

📥 Download Datasheet

Preview of IRF530NS PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF530N - N-channel TrenchMOS transistor (NXP)
  • IRF530NPBF - N-Channel MOSFET (VBsemi)
  • IRF530 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF5305S - P-Channel MOSFET (INCHANGE)
  • IRF530A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF530FI - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF530FP - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • IRF530R - N-Channel Power MOSFETs (Harris Semiconductor)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF530NS-like datasheet