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IRF530FP Datasheet - STMicroelectronics

IRF530FP N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 10 A s s TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS.

IRF530FP Datasheet (77.59 KB)

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Datasheet Details

Part number:

IRF530FP

Manufacturer:

STMicroelectronics ↗

File Size:

77.59 KB

Description:

N-channel enhancement mode power mos transistor.

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IRF530FP N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

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