IRF520FI
IRF520 IRF520FI
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE TO-220
3 1 2
1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(
- ) P tot V ISO T stg Tj Parameter IRF520 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.) at Tc = 25 C Drain Current (cont.) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC)...
