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IRF5305L P-Channel MOSFET

IRF5305L Description

isc P-Channel MOSFET Transistor *.

IRF5305L Features

* Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF5305L Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature
* THERMAL CHARACTERIST

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Datasheet Details

Part number
IRF5305L
Manufacturer
INCHANGE
File Size
224.21 KB
Datasheet
IRF5305L-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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