* 12A, 100V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334, “Guidelines fo
IRF9530
Fairchild Semiconductor
103.01 KB
P-channel power mosfets.
Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power fie.
📁 Related Datasheet
IRF9530 P-Channel Power MOSFET (Intersil Corporation)
IRF9530 Power MOSFET (International Rectifier)
IRF9530 Power MOSFET (Vishay)
IRF9530 P-Channel MOSFET (INCHANGE)
IRF9530-220M P-Channel Power MOSFET (Seme LAB)
IRF9530N Power MOSFET (International Rectifier)
IRF9530N P-Channel MOSFET (INCHANGE)
IRF9530NL Power MOSFET (International Rectifier)
IRF9530NL P-Channel MOSFET (INCHANGE)
IRF9530NLPbF Power MOSFET (Infineon)
