IRF9530 Datasheet P-Channel Power MOSFETs

Manufacturer: Fairchild (now onsemi)

IRF9530 p-channel power mosfets by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRF9530
Manufacturer	Fairchild (now onsemi)
File Size	103.01 KB
Description	P-Channel Power MOSFETs
Datasheet	IRF9530 Datasheet

Overview

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

12A, 100V.
rDS(ON) = 0.300Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263A GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconduc.

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