IRF9530 Datasheet - Fairchild Semiconductor

IRF9530, P-Channel Power MOSFETs

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁe

Features

* 12A, 100V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334, “Guidelines fo

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly development

IRF9530-FairchildSemiconductor.pdf