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IRFI614B, IRFW614B Datasheet - Fairchild Semiconductor

IRFI614B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI614B Features

* 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G! G S D2-PAK IRFW Series G D S I2-PAK IR

IRFW614B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFI614B, IRFW614B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRFI614B, IRFW614B

Manufacturer:

Fairchild Semiconductor

File Size:

671.95 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFI614B, IRFW614B.
Please refer to the document for exact specifications by model.

IRFI614B Distributor

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TAGS

IRFI614B IRFW614B N-Channel MOSFET Fairchild Semiconductor