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IRFI630B, IRFW630B Datasheet - Fairchild Semiconductor

IRFI630B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFW630B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFI630B, IRFW630B. Please refer to the document for exact specifications by model.
IRFI630B Datasheet Preview Page 2 IRFI630B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFI630B, IRFW630B

Manufacturer:

Fairchild Semiconductor

File Size:

671.69 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFI630B, IRFW630B.
Please refer to the document for exact specifications by model.

IRFI630B Distributor

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TAGS

IRFI630B IRFW630B N-Channel MOSFET Fairchild Semiconductor