Datasheet4U Logo Datasheet4U.com

IRFI640A Power MOSFET

IRFI640A Description

Advanced Power MOSFET IRFW/I640A .

IRFI640A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Ch

📥 Download Datasheet

Preview of IRFI640A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFI640G - Power MOSFET (International Rectifier)
  • IRFI640GPbF - Power MOSFET (Vishay)
  • IRFI644G - Power MOSFET (Vishay)
  • IRFI610A - Power MOSFET (Samsung)
  • IRFI614G - Power MOSFET (International Rectifier)
  • IRFI614GPBF - Power MOSFET (International Rectifier)
  • IRFI620G - Power MOSFET (International Rectifier)
  • IRFI624G - Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI640A-like datasheet