IRFI640GPbF Description
Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
IRFI640GPbF Features
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
Available
RoHS
* COMPLIANT
* Low Thermal Resistance
IRFI640GPbF Applications
* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr
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