IRFI630G Datasheet - Vishay

Power MOSFET

IRFI630G Features

* Isolated package

* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to lead creepage distance = 4.8 mm

* Dynamic dV/dt rating

* Low thermal resistance

* Material categorization: for definitions of compliance please see www.vishay.com/d

IRFI630G General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

IRFI630G Datasheet (915.75 KB)

IRFI630G Datasheet Preview — Preview of IRFI630G PDF

Datasheet Details

Part number:

IRFI630G

Manufacturer:

Vishay ↗

File Size:

915.75 KB

Description:

Power mosfet.
www.vishay.com IRFI630G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (.

📁 Related Datasheet

IRFI630 200V N-Channel MOSFET (Fairchild Semiconductor)

IRFI630 Power MOSFET (International Rectifier)

IRFI630A Power MOSFET (Samsung)

IRFI630B 200V N-Channel MOSFET (Fairchild Semiconductor)

IRFI630B N-Channel MOSFET (Fairchild Semiconductor)

IRFI630G Power MOSFET (International Rectifier)

IRFI634 250V N-Channel MOSFET (Fairchild Semiconductor)

IRFI634A Power MOSFET (Fairchild Semiconductor)

IRFI634B 250V N-Channel MOSFET (Fairchild Semiconductor)

IRFI634B N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFI630G Power MOSFET Vishay

Image Gallery

IRFI630G Features

IRFI630G General Description

Datasheet Details

File Size:

Description:

IRFI630G Distributor