IRFI620G Datasheet - Vishay

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IRFI620G Power MOSFET

Power MOSFET IRFI620G, SiHFI620G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFI620G-Vishay.pdf

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Datasheet Details

Part number:

IRFI620G

Manufacturer:

Vishay ↗

File Size:

1.45 MB

Description:

Power MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS
* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT
* Dynamic dV/dt Rating
* Low Thermal Resistance

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

IRFI620G Distributors

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