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IRFI640G - Power MOSFET

IRFI640G Description

www.vishay.com IRFI640G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFI640G Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please see www. vishay. com/d

IRFI640G Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr

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Power MOSFET Vishay
Vishay IRFI640G-like datasheet