IRFI640G
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Power mosfet. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
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IRFI640 - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFI640A - Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.
IRFI640B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFI640B - N-Channel MOSFET
(Fairchild Semiconductor)
IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFI640G - Power MOSFET
(International Rectifier)
.
IRFI640GPbF - Power MOSFET
(Vishay)
Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 .
IRFI644 - 250V N-Channel MOSFET
(Fairchild Semiconductor)
IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFI644 - Power MOSFET
(International Rectifier)
.
IRFI644A - Power MOSFET
(Fairchild Semiconductor)
..
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
IRFI644B - 250V N-Channel MOSFET
(Fairchild Semiconductor)
IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
