IRFI640G Datasheet (Vishay)

IRFI640G, Power MOSFET

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The moldin

IRFI640G Features

* Isolated package

* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to lead creepage distance = 4.8 mm

* Dynamic dV/dt rating

* Low thermal resistance

* Material categorization: for definitions of compliance please see www.vishay.com/d