Datasheet4U Logo Datasheet4U.com

IRFI640B 200V N-Channel MOSFET

IRFI640B Description

IRFW640B / IRFI640B November 2001 IRFW640B / IRFI640B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

📥 Download Datasheet

Preview of IRFI640B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFI640G - Power MOSFET (International Rectifier)
  • IRFI640GPbF - Power MOSFET (Vishay)
  • IRFI644G - Power MOSFET (Vishay)
  • IRFI610A - Power MOSFET (Samsung)
  • IRFI614G - Power MOSFET (International Rectifier)
  • IRFI614GPBF - Power MOSFET (International Rectifier)
  • IRFI620G - Power MOSFET (International Rectifier)
  • IRFI624G - Power MOSFET (International Rectifier)

📌 All Tags

200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI640B-like datasheet