IRFI640B Datasheet - Fairchild Semiconductor

IRFI640B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI640B_FairchildSemiconductor.pdf