IRFI510G Power MOSFET

Vishay

Description

Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Specifications

Part number: IRFI510G
Manufacturer: Vishay ↗
File Size: 741.29 KB
Datasheet: IRFI510G-Vishay.pdf
Description: Power MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS
* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Le

Applications

* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s

IRFI510G Distributors

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IRFI510G Power MOSFET Vishay

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