Datasheet Details
- Part number
- IRFI510G
- Manufacturer
- Vishay ↗
- File Size
- 741.29 KB
- Datasheet
- IRFI510G-Vishay.pdf
- Description
- Power MOSFET
IRFI510G Description
Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.
IRFI510G Features
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS
* Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Le
IRFI510G Applications
* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s
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