IRFI5210 Datasheet - International Rectifier

IRFI5210, Power MOSFET

PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm l P-Chan.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFI5210-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI5210

Manufacturer:

International Rectifier

File Size:

148.16 KB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

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IRFI5210 Power MOSFET International Rectifier

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