IRFI5210 Datasheet - International Rectifier

Power MOSFET

IRFI5210 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFI5210 Datasheet (148.16 KB)

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IRFI5210

Manufacturer:

International Rectifier

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148.16 KB

Description:

Power mosfet.
PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Chan.

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IRFI5210 Power MOSFET International Rectifier

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IRFI5210 General Description

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