IRFI520A - Advanced Power MOSFET
IRFI520A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RD
