IRFI530G Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRFI530G

Manufacturer:

International Rectifier

File Size:

171.74kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet.

Datasheet Preview: IRFI530G 📥 Download PDF (171.74kb)
Page 2 of IRFI530G Page 3 of IRFI530G

TAGS

IRFI530G
HEXFET
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRFI530A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω.

IRFI530G - Power MOSFET (Vishay)
Power MOSFET IRFI530G, SiHFI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 .

IRFI530G - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.16Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25m.

IRFI530N - HEXFET Power MOSFET (International Rectifier)
PD - 9.1353A PRELIMINARY IRFI530N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ….

IRFI530NPBF - Power MOSFET (International Rectifier)
HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fu.

IRFI510 - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRFI510A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRFI510G - Power MOSFET (International Rectifier)
.

IRFI510G - Power MOSFET (Vishay)
Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.

IRFI510G - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25m.

Stock and price

Vishay Siliconix
MOSFET N-CH 100V 9.7A TO220-3
DigiKey
IRFI530G
0 In Stock
Qty : 1000 units
Unit Price : $1.84
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts