IRFI530NPBF

Power MOSFET

International Rectifier

IRFI530NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFI530NPBF Datasheet (220.54 KB)

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IRFI530NPBF

Manufacturer:

International Rectifier

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220.54 KB

Description:

Power mosfet.
HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fu.

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IRFI530NPBF Power MOSFET International Rectifier

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IRFI530NPBF General Description

Datasheet Details

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