IRFI530NPBF
International Rectifier
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist
📁 Related Datasheet
IRFI530N - HEXFET Power MOSFET
(International Rectifier)
PD - 9.1353A
PRELIMINARY
IRFI530N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
.
IRFI530A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
..
IRFW/I530A
BVDSS = 100 V RDS(on) = 0.11 Ω.
IRFI530G - HEXFET Power MOSFET
(International Rectifier)
.
IRFI530G - Power MOSFET
(Vishay)
Power MOSFET
IRFI530G, SiHFI530G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 .
IRFI530G - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.16Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25m.
IRFI510 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFI510A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFI510G - Power MOSFET
(International Rectifier)
.
IRFI510G - Power MOSFET
(Vishay)
Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
IRFI510G - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.54Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25m.
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