IRFI530NPBF Datasheet - International Rectifier

IRFI530NPBF, Power MOSFET

HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm l Fu.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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IRFI530NPBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI530NPBF

Manufacturer:

International Rectifier

File Size:

220.54 KB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

IRFI530NPBF Distributors

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IRFI530NPBF Power MOSFET International Rectifier

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