IRFI520N Datasheet - International Rectifier

IRFI520N, Power MOSFET

PD - 9.1362A PRELIMINARY IRFI520N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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IRFI520N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI520N

Manufacturer:

International Rectifier

File Size:

133.44 KB

Description:

Power MOSFET

Features

* .80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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