IRFI520N - Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des
IRFI520N Features
* .80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.
