Part number:
IRFI510
Manufacturer:
Fairchild Semiconductor
File Size:
253.63 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PA
IRFI510
Fairchild Semiconductor
253.63 KB
Advanced power mosfet.
📁 Related Datasheet
IRFI510A Advanced Power MOSFET (Fairchild Semiconductor)
IRFI510G Power MOSFET (International Rectifier)
IRFI510G Power MOSFET (Vishay)
IRFI510G N-Channel MOSFET (INCHANGE)
IRFI520A Advanced Power MOSFET (Fairchild Semiconductor)
IRFI520G HEXFET POWER MOSFET (International Rectifier)
IRFI520G Power MOSFET (Vishay)
IRFI520GPBF HEXFET Power MOSFET (International Rectifier)
IRFI520N Power MOSFET (International Rectifier)
IRFI5210 Power MOSFET (International Rectifier)