Datasheet4U Logo Datasheet4U.com

IRFI510 - Advanced Power MOSFET

IRFI510 Description

Advanced Power MOSFET .

IRFI510 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PA

📥 Download Datasheet

Preview of IRFI510 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRFI510
Manufacturer
Fairchild Semiconductor
File Size
253.63 KB
Datasheet
IRFI510_FairchildSemiconductor.pdf
Description
Advanced Power MOSFET

📁 Related Datasheet

  • IRFI510G - Power MOSFET (International Rectifier)
  • IRFI520G - HEXFET POWER MOSFET (International Rectifier)
  • IRFI520GPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFI520N - Power MOSFET (International Rectifier)
  • IRFI5210 - Power MOSFET (International Rectifier)
  • IRFI530G - HEXFET Power MOSFET (International Rectifier)
  • IRFI530N - HEXFET Power MOSFET (International Rectifier)
  • IRFI530NPBF - Power MOSFET (International Rectifier)

📌 All Tags

Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI510-like datasheet