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IRFI510

Advanced Power MOSFET

IRFI510 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PA

IRFI510 Datasheet (253.63 KB)

Preview of IRFI510 PDF

Datasheet Details

Part number:

IRFI510

Manufacturer:

Fairchild Semiconductor

File Size:

253.63 KB

Description:

Advanced power mosfet.

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IRFI510 Advanced Power MOSFET Fairchild Semiconductor

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