IRFI510 - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFI510
Manufacturer	Fairchild Semiconductor
File Size	253.63 KB
Description	Advanced Power MOSFET
Datasheet	IRFI510 Datasheet
Additional preview pages of the IRFI510 datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.

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Published: Apr 16, 2005 |