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IRFI710B - 400V N-Channel MOSFET

IRFI710B Description

IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI710B Features

* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK IRF

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI710B-like datasheet