IRFI730B Datasheet - Fairchild Semiconductor

IRFI730B 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G! G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFI730B_FairchildSemiconductor.pdf