Datasheet4U Logo Datasheet4U.com

IRFI730B Datasheet - Fairchild Semiconductor

400V N-Channel MOSFET

IRFI730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G! G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFI730B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI730B Datasheet (681.53 KB)

Preview of IRFI730B PDF

Datasheet Details

Part number:

IRFI730B

Manufacturer:

Fairchild Semiconductor

File Size:

681.53 KB

Description:

400v n-channel mosfet.

📁 Related Datasheet

IRFI730A Power MOSFET (Samsung)

IRFI730G HEXFET Power MOSFET (International Rectifier)

IRFI730G Power MOSFET (Vishay)

IRFI734 Power MOSFET (International Rectifier)

IRFI734G Power MOSFET (International Rectifier)

IRFI734GPBF HEXFET Power MOSFET (International Rectifier)

IRFI710A Power MOSFET (Fairchild Semiconductor)

IRFI710B 400V N-Channel MOSFET (Fairchild Semiconductor)

IRFI720A Power MOSFET (Samsung)

IRFI720B 400V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFI730B 400V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFI730B Datasheet Preview Page 2 IRFI730B Datasheet Preview Page 3

IRFI730B Distributor