Datasheet4U Logo Datasheet4U.com

IRFW644B N-Channel MOSFET

IRFW644B Description

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW644B Features

* 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK IRFI

📥 Download Datasheet

Preview of IRFW644B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFW610A - Power MOSFET (Samsung)
  • IRFW630A - Power MOSFET (Samsung)
  • IRFW630B - N-Channel MOSFET (ON Semiconductor)
  • IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFW720A - Power MOSFET (Samsung)
  • IRFW730A - Power MOSFET (Samsung)
  • IRFW830A - Power MOSFET (Samsung)
  • IRFWZ24A - Power MOSFET (Samsung)

📌 All Tags

Fairchild Semiconductor IRFW644B-like datasheet