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IRFZ24A - ADVANCED POWER MOSFET

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Fairchild Semiconductor

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IRFZ24A ADVANCED POWER MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFZ24A

Datasheet Details

Part number	IRFZ24A
Manufacturer	Fairchild Semiconductor
File Size	247.25 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRFZ24A Datasheet
Additional preview pages of the IRFZ24A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.050µ (Typ. ) IRFZ24A BVDSS = 60 V RDS(on) = 0.07Ω ID = 17 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characterist.

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Published: Jan 27, 2007 |