IRFZ24NL
International Rectifier
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A
D
N Channel
G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s.
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IRFZ24NS/L
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l l l l l l
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D
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G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s.