IRFZ24NSPBF Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRFZ24NSPBF

Manufacturer:

International Rectifier

File Size:

818.83kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generat

TAGS

📁 Related Datasheet

IRFZ24NSPbF - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lo.

IRFZ24NS - Power MOSFET (International Rectifier)
.. PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu.

IRFZ24NS - Power MOSFET (TRANSYS)
IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s.

IRFZ24NS - N-Channel MOSFET (VBsemi)
IRFZ24NS IRFZ24NS Datasheet N-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.023 at VGS = 10 V 0.027 at VGS = .

IRFZ24N - N-channel enhancement mode TrenchMOS transistor (NXP)
.. Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en.

IRFZ24N - Power MOSFET (International Rectifier)
HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea.

IRFZ24N - Power MOSFET (ART CHIP)
IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=.

IRFZ24N - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta.

IRFZ24NL - Power MOSFET (International Rectifier)
.. PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu.

IRFZ24NL - Power MOSFET (TRANSYS)
IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s.