IRFZ24N Datasheet, transistor equivalent, NXP

IRFZ24N Features

• Transistor very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applicat

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Part number:

IRFZ24N

Manufacturer:

NXP ↗

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191.46kb

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📄 Datasheet

Description:

N-channel enhancement mode trenchmos transistor. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device f

IRFZ24N Application

• Applications IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation

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IRFZ24N

NXP

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