IRFZ24N N-channel enhancement mode TrenchMOS transistor

NXP

Description

www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

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Datasheet Specifications

Part number: IRFZ24N
Manufacturer: NXP ↗
File Size: 191.46 KB
Datasheet: IRFZ24N_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode TrenchMOS transistor

Applications

* IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 17 45 175 70 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESC

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IRFZ24N N-channel enhancement mode TrenchMOS transistor NXP

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