IRFZ24N
International Rectifier
251.28 KB
Power mosfet.
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lea.
📁 Related Datasheet
IRFZ24 - Power MOSFET
(International Rectifier)
.
IRFZ24 - Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
IRFZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge .
IRFZ24 - Power MOSFET
(Vishay)
.vishay.
IRFZ24
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRFZ24A - ADVANCED POWER MOSFET
(Fairchild Semiconductor)
..
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
IRFZ24L - HEXFET Power MOSFET
(International Rectifier)
..
PD - 9.891A
IRFZ24S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-ho.
IRFZ24L - Power MOSFET
(Vishay)
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
60 VGS = 10 V
25
Qgs (nC)
5.
IRFZ24N - N-channel enhancement mode TrenchMOS transistor
(NXP)
..
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel en.
IRFZ24N - Power MOSFET
(ART CHIP)
IRFZ24N
HEXFET ® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated
VDSS=.
