IRFZ24N Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRFZ24N

Manufacturer:

International Rectifier

File Size:

251.28kb

Download:

📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest poss

IRFZ24N Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 5

TAGS

IRFZ24N

International Rectifier

📁 Related Datasheet

IRFZ24 - Power MOSFET (International Rectifier)
.

IRFZ24 - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET IRFZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge .

IRFZ24 - Power MOSFET (Vishay)
.vishay. IRFZ24 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .

IRFZ24A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
.. $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .

IRFZ24L - HEXFET Power MOSFET (International Rectifier)
.. PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-ho.

IRFZ24L - Power MOSFET (Vishay)
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 25 Qgs (nC) 5.

IRFZ24N - N-channel enhancement mode TrenchMOS transistor (NXP)
.. Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en.

IRFZ24N - Power MOSFET (ART CHIP)
IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=.

IRFZ24N - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta.

IRFZ24NL - Power MOSFET (International Rectifier)
.. PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu.