IRFZ24N Datasheet - International Rectifier

Power MOSFET

IRFZ24N General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr.

IRFZ24N Datasheet (251.28 KB)

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IRFZ24N

Manufacturer:

International Rectifier

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251.28 KB

Description:

Power mosfet.
HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea.

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IRFZ24N Power MOSFET International Rectifier

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IRFZ24N General Description

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