Datasheet4U Logo Datasheet4U.com

IRFZ24S - HEXFET Power MOSFET

This page provides the datasheet information for the IRFZ24S, a member of the IRFZ24L HEXFET Power MOSFET family.

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRFZ24S

📁 Similar Datasheet

  • IRFZ24S - Power MOSFET (Vishay)
  • IRFZ24 - Power MOSFET (Fairchild Semiconductor)
  • IRFZ24 - Power MOSFET (Vishay)
  • IRFZ24A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
  • IRFZ24L - Power MOSFET (Vishay)
  • IRFZ24N - N-channel enhancement mode TrenchMOS transistor (NXP)
  • IRFZ24N - Power MOSFET (ART CHIP)
  • IRFZ24N - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFZ24NL - Power MOSFET (TRANSYS)
  • IRFZ24NLPbF - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Published: |