IRFZ24NL
TRANSYS
155.37kb
Power mosfet.
TAGS
📁 Related Datasheet
IRFZ24N - N-channel enhancement mode TrenchMOS transistor
(NXP)
..
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel en.
IRFZ24N - Power MOSFET
(International Rectifier)
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lea.
IRFZ24N - Power MOSFET
(ART CHIP)
IRFZ24N
HEXFET ® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated
VDSS=.
IRFZ24N - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta.
IRFZ24NL - Power MOSFET
(International Rectifier)
..
PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu.
IRFZ24NLPBF - HEXFET Power MOSFET
(International Rectifier)
..
PD - 95147
IRFZ24NS/LPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL).
IRFZ24NLPbF - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-262(DPAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot.
IRFZ24NPBF - Power MOSFET
(International Rectifier)
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lea.
IRFZ24NS - Power MOSFET
(International Rectifier)
..
PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile throu.
IRFZ24NS - Power MOSFET
(TRANSYS)
IRFZ24NS/NL
Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A
D
N Channel
G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless s.
