IRF840 Datasheet (TRANSYS)

IRF840, Power MOSFET

IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum.

Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS(th) VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA Static Drain to