IRFZ24NS, IRFZ24NL Datasheet - TRANSYS

IRFZ24NS Power MOSFET

IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Value Min Typ Drain to Source Breakdown Voltage Drain to Source Leakage Current V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 55VDC, VGS = 0VDC VDS = 44VDC, VGS = 0VDC Tj=150 C 55 - - - Gate to Source Leakage Current Gate Threshold Voltage IGSS VGS(th) VGS = +20VDC VGS = -20VDC VDS = VGS,.

IRFZ24NL-TRANSYS.pdf

IRFZ24NS Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFZ24NS, IRFZ24NL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFZ24NS, IRFZ24NL

Manufacturer:

TRANSYS

File Size:

155.37 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFZ24NS, IRFZ24NL.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFZ24N N-channel enhancement mode TrenchMOS transistor (NXP)

IRFZ24N Power MOSFET (International Rectifier)

IRFZ24N Power MOSFET (ART CHIP)

IRFZ24N N-Channel MOSFET Transistor (Inchange Semiconductor)

IRFZ24NL Power MOSFET (International Rectifier)

IRFZ24NL Power MOSFET (TRANSYS)

IRFZ24NLPBF HEXFET Power MOSFET (International Rectifier)

IRFZ24NLPbF N-Channel MOSFET (INCHANGE)

TAGS

IRFZ24NS IRFZ24NL Power MOSFET TRANSYS

IRFZ24NS Distributor